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Raytheon to develop state-of-the-art UWBGS with diamond and aluminium nitride technology for DARPA

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Update time : 2024-10-15 13:21:50
Raytheon has acquired a pivotal three-year, two-phase contract with DARPA where they are to devise foundational Ultra-Wide Bandgap Semiconductors(UWBGS).
The basic of the UWBGS, diamond and aluminium nitride technology, has revolutionised semiconductor electronics, enhancing power delivery and thermal management in sensors and other electronic applications.

RTX business’ subsidiary, Raytheon, has also recently been awarded $736 million contract to produce AIM-9X Sidewinder missiles for the U.S. Navy.

Phase one of the UWBGS contract will see the Raytheon Advanced Technology team develop diamond and aluminium nitride semiconductor films and their integration into electronic devices. The next phase will optimise and mature the diamond and aluminium nitride technology in comparatively larger-diameter wafers for sensor applications.

The work on this contract is being carried out at Raytheon's foundry in Andover, Massachusetts.

UWBGS enables highly compact, ultra-high power frequency switches, limiters, and power amplifiers with its unique features and advantages over traditional semiconder technologies. Their elevated thermal conductivity also permits operating at higher temperatures and in more extreme environments.

The team's objective is to lead the development of UWBGS towards devices that are ideal for both current and future radar and communication systems. These devices, with extended capability and range, could be used in cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonic.

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